The carrier concentration profiles, photovoltage spectra in different depth and minority carrier diffusion lengths of n-InP samples, into which zinc was open diffused at temperature of 470 ℃ in hydrogen atmosphere, have been measured by using electrochemical liquid junction method. 用电化学液结方法测量了在470℃于氢气氛下开管扩锌InP样品的载流子浓度分布、不同深度的光伏谱和少于扩散长度。
The effective surface recombination velocity at the interface of diffused n+ n high-low junction in solar cells 太阳电池扩散N~+N高低结界面的有效表面复合速度
Effects of Surface Recombination Velocity and Junction Depth on the Performance of n~+-p Diffused Junction Silicon Solar Cells 表面复合速度和结深对硅扩散n~+-p结太阳电池性能的影响
An analytical study of photocurrent response in the short wavelength region of diffused silicon p-n junction has been made. 对扩散p-n结的光电流在短波长区域的响应进行了解析研究。
The determination of the surface impurity concentration of n/ p Si epitaxial chips with buried n~+ diffused layer by Schottky junction c~ (-2)-v method 肖特基结C~(-2)-V法测定n~+埋层扩散后的n/p硅外延片表面杂质浓度
Analytical Calculation of Avalanche Breakdown Parameters in High-Voltage Diffused p-n Junction 高压扩散结雪崩击穿参量的解析计算
Photocurrent in a diffused p-n junction 扩散p-n结的光电流